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VISHAY SIS410DN-T1-GE3 MOSFET Transistor, N Channel, 35 A, 20 V, 4 mohm, 10 V, 1.2 V Matthews 415168 and other public meetings

SKU 81349350669
4.6
USD137.65 USD175.65

Pay in 4 interest-free payments of $34.41 Learn more

Shipping Estimate
USA
  • USA
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Ships within 48 hours · Estimated delivery Aug 18 - Aug 23

Description

and other public meetings

Operating Temperature Min -55°C Capacitor Terminals Radial Leaded Operating Temperature Max 125°C Voltage Rating 50V Product Range MC Series Automotive Qualification Standard - Capacitance 18pF Lead Spacing 2

FAST ACTING product from EATON BUSSMANN SERIES with the model number TR/3216FF6

Maximum Level: +24 dBu (0 dBFs) Power 110 to 240 VAC

2-channel operation

VISHAY SIS410DN-T1-GE3 MOSFET Transistor, N Channel, 35 A, 20 V, 4 mohm, 10 V, 1.2 V Matthews 415168 and other public meetingsThis is a MOSFET Transistor, N Channel, 35 A, 20 V, 4 mohm, 10 V, 1. 2 V product from VISHAY with the model number SIS410DN T1 GE3Product details Power Dissipation Pd 5. 2W Operating Temperature Max 150C Continuous Drain Current Id 35A Transistor Polarity N Channel No. of Pins 8Pins Threshold Voltage Vgs 1. 2V Product Range Automotive Qualification Standard Drain Source Voltage Vds 20V Rds(on) Test Voltage Vgs 10V Transistor Case Style PowerPAK 1212

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