ON SEMICONDUCTOR BUV21G Bipolar (BJT) Single Transistor, NPN, 200 V, 8 MHz, 250 W, 40 A, 10 hFE Vocas 0350-2220 General Purpose

General Purpose

2mm Inductance 15µH Inductor Construction Shielded Product Range SRR1005 Series DC Resistance Max 0

Two 120mm cooling fans on the sides provide adequate ventilation to prevent critical equipment from heat damage

Both ADC and DAC support sample rates of 8KHz to 48KHz in either synchronous or asynchronous operation

Angular field of view range: 5-3°

ON SEMICONDUCTOR BUV21G Bipolar (BJT) Single Transistor, NPN, 200 V, 8 MHz, 250 W, 40 A, 10 hFE Vocas 0350-2220 General PurposeThis is a Bipolar (BJT) Single Transistor, NPN, 200 V, 8 MHz, 250 W, 40 A, 10 hFE product from ON SEMICONDUCTOR with the model number BUV21GProduct details Power Dissipation Pd 250W DC Collector Current 40A Collector Emitter Voltage V(br)ceo 200V Transition Frequency ft 8MHz Operating Temperature Max 200C Transistor Polarity NPN DC Current Gain hFE 10hFE No. of Pins 2Pins Product Range Automotive Qualification Standard Transistor Case Style TO 3 MSL