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STMICROELECTRONICS BDW94C Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 80 W, 12 A, 1000 hFE CyberPower CP850AVRLCD 91 kg) Packaging Info Package

SKU 51805614103
4.1
USD135.84 USD182.84

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Ships within 48 hours · Estimated delivery Aug 22 - Aug 27

Description

91 kg) Packaging Info Package Weight 8

Operating Temperature Min -40°C Capacitor Terminals Radial Leaded Operating Temperature Max 105°C Lifetime @ Temperature 10000 hours @ 105°C Voltage Rating 63V Product Range EB Series Diameter 10mm Automotive Qualification Standard - ESR - Capacitance 220µF Lead Spacing 5mm Capacitance Tolerance ± 20% Packaging Each Height 20mm Other details

Space-Saving Design

5 x 2" (11

or simply sling it over your shoulder using the supplied carrying strap

STMICROELECTRONICS BDW94C Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 80 W, 12 A, 1000 hFE CyberPower CP850AVRLCD 91 kg) Packaging Info PackageThe BDW94C is a 100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. Complementary to the BDW93C Integrated anti parallel collector emitter diode Well controlled hFE parameter for increased reliability Applications Industrial Product details

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
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