ON SEMICONDUCTOR 2N3055AG Bipolar (BJT) Single Transistor, NPN, 60 V, 6 MHz, 115 W, 15 A, 2.5 hFE SHAPE HAC300-RE UPC: 656747008108

UPC: 656747008108

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ON SEMICONDUCTOR 2N3055AG Bipolar (BJT) Single Transistor, NPN, 60 V, 6 MHz, 115 W, 15 A, 2.5 hFE SHAPE HAC300-RE UPC: 656747008108The 2N3055AG is a 60V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters, inverters or for inductive loads requiring higher safe operating area than the 2N3055. High current gain bandwidth Safe operating area 100V Collector to base voltage (VCBO) 7V Emitter to base voltage (VEBO)